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lpc2300-I2C
- NXP lpc2300的I2C程序代码,直接采用LPC2300自带的I2C控制器进行操作,包括读写24C02 \读写24C256\读写铁电FM24cl04等-NXP lpc2300 the I2C code, directly using LPC2300 own I2C controller to operate, including reading and writing 24C02 \ literacy 24C256 \ literacy FM24cl04 such as ferroelec
f02024c02
- C8051f020读写铁电24C02 ，随几读写，功能很强大。-C8051f020 read write 24c02
FM24C04test
- c8051f350,如何使用铁电串行存储器FM24C02 KEIL C 汇编多可以-c8051f350使用FM24C02
FM25H20
- 一款铁电存储器的说明文档,FM25H20自己用其感觉还不错！就是有点贵80RMB-A ferroelectric memory documentation, FM25H20 their sense of their own good! 80RMB is a little expensive
dsPIC33_Data_Recorder
- dsPIC33做的数据记录仪，用的MCU是dsPIC33FJ12GP201，数据存储器用的铁电FRAM：FM24CL64-dsPIC33 doing data logger, using the MCU is dsPIC33FJ12GP201, data memory using ferroelectric FRAM: FM24CL64
6cf666bb-f892-4ae3-ac0d-6bda8fa72ae8
- 模拟路灯控制系统之基于铁电VRS51L3单片机的解决方案
Ramtron_FM24C64_Driver(NEC_MCU)
- 为电力行业负控终端以及多功能表计使用的铁电技术存储器驱动文件，对应硬件接口为NEC单片机硬件接口资源；对应编译平台为NEC PM-Plus编译仿真环境。-Negative control terminal for the power industry, as well as multi-meter used as a ferroelectric memory technology driver file, the corresponding hardware interface for the
MSP430_IO_for_SPI_to_rerad_FRAM
- 用MSP430通用IO模拟SPI读写铁电存储器-implement SPI With the MSP430 general-purpose I/O port to read and write FRAM
nvram
- 铁电非易失存储器，用于嵌入式dsp外设，掉电前记忆重要数据。-NVRAM
main
- DSP2812铁电存储器操作程序, 24c02电可擦除存储器。-DSP2812EEPROM_programe
msp169
- 使用MSP430设计的流量计代码，有RTC,铁电-MSP430 design flowmeter using the code, there are RTC, ferroelectric
8
- 铁电存储器FM25L256的驱动程序.建议编辑环境：UltraEdit 11.00a+ 制表符宽度为三个字符，程序可读性更好。-FRAM FM25L256 drivers. Recommends editing environment: UltraEdit 11.00a+ tab width of three characters, the program better readable.
AMethodforDSPSPIBootloaderBasedonFerroelectricRAMP
- 介绍了一种SPI 接口的新型铁电存储器FRAM，同时还分析了TMS320VC5402 DSP 的SPI 引导装载模式，提出了一种基于FRAM 编程技术的DSP 脱机独立运行系统 的设计方案。-This paper introduces a new SPI interface, ferroelectric memory, FRAM, and also analyzed the TMS320VC5402 DSP' s SPI boot loader mode, presents a p
SpiReadFM24C64
- 测试铁电FM25CL64的SPI读写驱动程序，采用KEIL51编译程序，速度很快，寿命长，可以替代EEPROM和RAM。-FM25CL64 SPI write code use C51
C_V
- 用来描述铁电存储器MFIS-FET结构的C-V（即电容-电压）关系-Used to describe the ferroelectric memory MFIS-FET structure of CV (ie capacitance- voltage) relationship
on_off
- 铁电存储器MFIS-FET结构开态电流和关态电流的描述-FRAM MFIS-FET structure of open state current and off current descr iption
hysteresis_loop
- 描述铁电薄膜的极化与电场关系（即电滞回线图）-Descr iption of ferroelectric thin films hysteresis loops
memory_er
- 描述铁电薄膜的存储窗口与铁电介电常数的关系-Describe the ferroelectric thin film ferroelectric memory window and the relationship between dielectric constant
memory_pr_ps
- 描述铁电存储器MFIS-FET结构饱和极化和剩余极化对存储窗口的影响-Descr iption FRAM MFIS-FET structure of saturated polarization and remanent polarization effects on the storage window
id_Vg_v_as_param_new
- 在存在界面层的情况下，铁电存储器MFIS-FET结构漏极电流随界面层厚度变化的关系-Interface layer in the presence of the case, ferroelectric memory, MFIS-FET structure, the drain current with changes in the relationship between the interface layer thickness