搜索资源列表
GPIB-Vcsel
- GPIB 控制Agilent 34401A
VCSELmirrordesign
- VCSEL mirror design. periodic boundary conditions to approximate a periodic one-dimensional delta function potential with period 10 nm by considering eight potential barriers with energy 20 eV and width 0.25 nm.
TEL02_2
- This communication presents an alysis of the design and fabrication of power-efficient, low cost VCSEL-based optical transceiver proposed for emerging fiber data distributed interface (FDDI) and fiber channel local-area network (FCLAN
extrema
- part 1 about vcsel simulation of a paper I-part 1 about vcsel simulation of a paper IEEE
vcsel-simulation
- ode numerical simulation of vertical cavity semiconductor optical amplifier
vcsel
- these codes are about simulation of vcsel laser diod
VCSELDBR
- Matlab程序源代码，用于计算面发射激光器VCSEL的反射谱-caculation of the reflectivity of VCSEL
very-good-vcsel-fabri-oxide-confined
- VCSEL fabrication oxide-confined layer
angularSptrumNoLen
- 角谱--信号通过VCSEL注入光纤时，因为需要透镜耦合，所以光信号首先进入空气后再进入光纤，在空气中需要对信号进行空间FFT变换-Angular spectrum
angularSptrumWithLen
- 角谱--VCSEL发出的光，经过透镜耦合进入光纤，仿真给出光由VCSEL进过透镜进入光纤的过程-Angular spectrum
Output_profile_of_VCSEL
- 用菲涅尔衍射以及夫琅禾费衍射中的傅里叶变换，来模拟表面带有二维结构的VCSEL的出射光的传播。所依据的公式比较复杂，要想看懂建议参考：《傅里叶光学导论》 -古德曼（Goodman）-Simulation of wave propagation of a 2-D micro-structure in the surface of a VCSEL using Fourier Transformation in the Fresnel and Fraunhofer diffraction.
E_field_of_VCSEL
- 本文件模拟的是普通结构的VCSEL的纵向电场分布以及器件的纵向折射率分布。参数可调，带有注解。-this m file is the calculation of the contribution of the longitudinal electrical field and the longitudinal refractive index. The parameters can be modified and are noted.
Effect-of-the-Changing-DBR-Doping
- This study is an attempt to investigate the effect of distributed Bragg reflectors (DBRs) doping concentration on the GaN-based vertical cavity surface emitting lasers (VCSEL) using Integrated System Engineering Technical Computer Aided Desig
Presentation1
- vertical-cavity surface-emitting laser (semiconductor laser device, diode laser) Telecomunications, Pumping source Wave length : infrared to visible etched mesa VCSEL 980nm Buried tunnel junction(BTJ) VCSEL 1300nm,1550nm Material: ALG
6908-7
- We review recent results on high-power, high-efficiency two-dimensional vertical-cavity surface-emitting laser (VCSEL) arrays emitting around 980nm. Selectively oxidized, bottom-emitting single VCSEL emitters with 51 power conversion efficiency w
source_2007_03_05_WSI
- naxtnano的应用范围包括量子阱，量子线，量子点，纳米线，纳米微晶体，量子级联激光器 （QCL），共振隧穿二极管（RTD），高电子迁移率晶体管（HEMT），Nano-MOSFETs， LEDs，激光器（e.g. VCSEL），高效太阳能板，有机半导体，离子敏场效应管（ISFET）以及 石墨烯，“应变硅，“低含氮化合物”等新型材料。是一款集合了k.p方法、自洽求解泊松-薛定谔方程等物理模型与一体的半导体光电子行业软件。-naxtnano range of applications
62702406vcsel5
- VCSEL激光器程序，高速传输性能，精细可以使用。经过验证(VCSEL laser program, high-speed transmission performance, fine, can be used. Verified)
垂直腔面发射激光器
- 研究了VCSEL的饱和效应对激光器的慢光延时的影响，推导出相位和延时的关系。(The influence of saturation effect of VCSEL on the slow light delay of laser is studied, and the relation between phase and delay is deduced.)
06482594
- 基于VSEL慢光的传输延时的限制方针和实验，表明VSEL器件收到饱和等因素的影响，延时时间收到限制。(The delay policy and experiment of slow light transmission based on VSEL show that the VSEL device receives saturation and other factors, and the delay time is limited.)
求导
- 全国研究生数学建模A题vcsel激光器建模源码，仅供参考(National graduate student mathematical modeling A VCSEL laser modeling source, for reference only)