This asset originates from the tunneling injection being free of the subthreshold slope limit that fundamentally blocks the MOSFET [3]. Moreover, the limit of low ION in TFETs is wearing off, as drive currents around 100 ìA/ìm have been reported recently [4]–[8]. Despite a large interest in TFET performance, little investigation has been done so far on the drain voltage dependence of their electrical characteristics [9]–[12], [18]. The main difference reported between the output ID(VD) characteristics is the presence of superlinear regime in TFET as opposed to ohmic regime for MOSFET [9]. The superlinear regime, and more specifically, the onset it generates on the output characteristics is already well understood [16], [17]. We report here for the first time an exponential dependence of band-to-band tunneling (BtBT) current with drain voltage on both measured and simulated TFET ID(VD) characteristics.