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xc6206
- CMOS Low Power Consumption Dropout Voltage 160V @ 100mA 400mV @ 200mA Output Current more than 250mA <5.0V type> Highly Accurate + 2 Output Voltage Range 1.2V to 5.0V Current Limiter Circuit Built-in Low ESR Ceramic Capaci
MO3080_DS_pre_v0-4-0804
- 来一个好的感光芯片，大尺寸，感光效果好的cmos芯片。-A light-sensitive chip, large-size, photographic effects, good cmos chip.
Datasheets
- Mobile DDR SDRAM MT46H32M16LF – 8 Meg x 16 x 4 banks MT46H16M32LF/LG – 4 Meg x 32 x 4 banks TFT-G240320LTSW-118W-E 16-megabit 2.5-volt or 2.7-volt DataFlash K9F1G08X0A S25FL032P S25FL032P Cover Sheet 32-Mbit CMOS 3.0 Volt Flash Memory
Hspice
- CMOS hspice Learning-hspice Learning
What-is-TTL
- 鉴于很多电子初学者对什么是TTL电平,什么是CMOS电平不清楚.也不能了解CMOS电平与TTL电平的区别.特别在网上找到这篇TTL和CMOS电平总结.感谢作者的工作.-In view of the many electronic beginners What is TTL level CMOS level is not clear. Nor to understand the difference between the CMOS level and TTL level find online,
OV3640
- The OV3640 (color) image sensor is a low voltage, high performance 1/4-inch 3.2-megapixel CMOS image sensor that provides the full functionality
TTL-CMOS-Series
- The 7400 series contains hundreds of devices that provide everything from basic logic gates, flip-flops, and counters, to special purpose bus transceivers and Arithmetic Logic Units (ALU). Specific functions are described in a list of 7400 series int
OV7670-Chinese--sheet
- OV7670/OV7171 CMOS VGA 图像传感器高级数据手册 OV7670/OV7171 CAMERACHIPTM图像传感器，体积小、 工作电压低，提供单片VGA摄像头和影像处理器的所 有功能。通过SCCB总线控制，可以输出整帧、子采 样、取窗口等方式的各种分辨率8位影响数据。该产 品VGA图像最高达到30帧/秒。用户可以完全控制图 像质量、数据格式和传输方式。所有图像处理功能过 程包括伽玛曲线、白平衡、饱和度、色度等都可以通 过SCCB接口编程。Ommi
93C86_www.ic37.com
- 博通 93C76芯片的相关介绍文档和使用说明文档配置说明-The Microchip Technology Inc. 93C76/86 are 8K and 16K low voltage serial Electrically Erasable PROMs. The device memory is configured as x8 or x16 bits depending on the ORG pin setup. Advanced CMOS technology make
19516
- CMOS leakage current estimation
60GHz-RFIC-IEEE-Paper
- A CMOS Bidirectional 32-element Phased-Array Transceiver at 60GHz with LTCC Antenna. Paper details the design of a CMOS based phased array with LTCC antenna for wireless PAN applications.
信号反弹作用下的3D-SIC过硅通孔的测试结构
- 3d sic三维堆叠集成电路（3D-SIC）主要采用过硅通孔技术来实现模块在垂直方向上的互连，但是硅通孔在制造过程或绑定后阶段都有可能出现失效，导致整个芯片无法正常工作。我们针对绑定后阶段硅通孔，利用信号在导体中传输的不可逆性，在信号接收端增加反弹模块，通过在发送端施加两次不同测试激励，利用触发器和多路选择器将两次输出结果进行异或，来达到测试目的。在4x4硅通孔逻辑块中，硅通孔单元面积是45x45um2，180nm CMOS工艺下，实验结果表明，测试结构面积和测试平均功耗分别减少59.8%和18
InDig-(Reparado)
- cmos multiplexer demultiplexer for am modulation project design
jlpea-02-00001
- CMOS leakage power reduction
EJSR_83_1_05.zip
- Journal on transistor level design of cmos,Journal on transistor level design of cmos
CCD摄像机资料大全
- ＣＤ，是英文Charge Coupled Device 即电荷耦合器件的缩写，它是一种特殊半导体器件，上面有很多一样的感光元件，每个感光元件叫一个像素。ＣＣＤ在摄像机里是一个极其重要的部件，它起到将光线转换成电信号的作用，类似于人的眼睛，因此其性能的好坏将直接影响到摄像机的性能。
H57V2562GTR-60C
- H57V2562GTR-60C数据手册，CMOS Synchronous DRAM,-H57V2562GTR-60C Data Sheet, CMOS Synchronous DRAM,
cmos
- 相机中的图像处理算法，包括彩色差值，自动白平衡等-Camera image processing algorithms, including color difference, automatic white balance, etc.
AR0130_DS_E
- ar0130的datasheet文档，通过该文档做出CMOS的初始化序列-ar0130 datasheet document, the document to make CMOS initialization sequence
Design-of-an-Operational-Amplifier
- disign whit HSPICE: Design and simulate a two stage CMOS operational amplifier shown in the Fig., for these conditions: DC Voltage Gain > 60dB Unity Gain Bandwidth > 70MHz Phase Margin > 50 degrees