vertical-cavity surface-emitting laser (semiconductor laser device, diode laser) Telecomunications, Pumping source Wave length : infrared to visible etched mesa VCSEL 980nm Buried tunnel junction(BTJ) VCSEL 1300nm,1550nm Material: ALG

Simultaneous all-optical regeneration and wavelength conversion is demonstrated at 2.488 Gb/s for the first time in an integrated distributed feedback laser/semiconductor optical amplifier. After 93 km of standard fiber, a negative sensitivity