用HF +HNO3 溶液蚀刻单晶硅表面,通过扫描电镜表征其形貌和厚度变化,研究了蚀刻液浓度、蚀刻时间及温度对单晶硅化学蚀刻行为的影响-Etched with HF+ HNO3 solution, silicon surfaces by scanning electron microscopy to characterize the morphology and thickness, the concentration of the etching solution, etching time and temperature on the chemical etching behavior of silicon