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文件名称:State_of_the-art_MOS_Comparison
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阵列信号处理信源数估计算法,用来估计信源数目-Matlab code of state-of-the-art 1-D model order selction (also known as source enumeration, estimating the number of source ignals impinging on an array of sensor) methods. The main function "main.m" compares the performance of them.
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下载文件列表
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State_of_the-art_MOS_Comparison/1-D EFT threshold/ | |||
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=10 | Ns=10 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=10 | Ns=100 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=10 | Ns=1000 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=10 | Ns=10000 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=10 | Ns=11 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=10 | Ns=20 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=10 | Ns=200 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=10 | Ns=2000 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=10 | Ns=25 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=10 | Ns=250 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=10 | Ns=30 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=10 | Ns=40 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=10 | Ns=400 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=10 | Ns=4000 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=10 | Ns=50 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=10 | Ns=500 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=10 | Ns=60 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=10 | Ns=70 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=10 | Ns=80 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=10 | Ns=90 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=100 | Ns=125 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=12 | Ns=15 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=15 | Ns=30 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=16 | Ns=20 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=20 | Ns=20 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=20 | Ns=25 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=20 | Ns=40 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=24 | Ns=30 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=25 | Ns=25 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=25 | Ns=30 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=25 | Ns=50 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=28 | Ns=35 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=30 | Ns=60 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=32 | Ns=40 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=35 | Ns=70 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=36 | Ns=40 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=36 | Ns=45 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=40 | Ns=50 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=40 | Ns=80 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=44 | Ns=55 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=45 | Ns=50 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=45 | Ns=90 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=48 | Ns=60 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=5 | Ns=1000 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=5 | Ns=500 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=5 | Ns=6 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=5 | Ns=7 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=5 | Ns=8 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=50 | Ns=100 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=50 | Ns=50 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=52 | Ns=65 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=56 | Ns=70 | Pfa=0.01 | unit=0.001).mat |
State_of_the-art_MOS_Comparison/1-D EFT threshold/eta_p (M=6 | Ns= |
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