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C_V
- 用来描述铁电存储器MFIS-FET结构的C-V（即电容-电压）关系-Used to describe the ferroelectric memory MFIS-FET structure of CV (ie capacitance- voltage) relationship
on_off
- 铁电存储器MFIS-FET结构开态电流和关态电流的描述-FRAM MFIS-FET structure of open state current and off current descr iption
hysteresis_loop
- 描述铁电薄膜的极化与电场关系（即电滞回线图）-Descr iption of ferroelectric thin films hysteresis loops
memory_er
- 描述铁电薄膜的存储窗口与铁电介电常数的关系-Describe the ferroelectric thin film ferroelectric memory window and the relationship between dielectric constant
memory_pr_ps
- 描述铁电存储器MFIS-FET结构饱和极化和剩余极化对存储窗口的影响-Descr iption FRAM MFIS-FET structure of saturated polarization and remanent polarization effects on the storage window
id_Vg_v_as_param_new
- 在存在界面层的情况下，铁电存储器MFIS-FET结构漏极电流随界面层厚度变化的关系-Interface layer in the presence of the case, ferroelectric memory, MFIS-FET structure, the drain current with changes in the relationship between the interface layer thickness
ferroelectric field effect transistors
- 在存在界面层的情况下，铁电存储器MFIS-FET结构漏极电流随界面层厚度变化的关系(ferroelectric field effect transistors)