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用FPGA实现SRAM读写控制的Verilog代码
- 用FPGA实现SRAM读写控制的Verilog代码-SRAM FPGA implementation using Verilog code to read and write control
SRAM
- VerilogHDL语言读写SRAM内部数据。SRAM芯片型号为61WV102416ALL，即1024K字，每字16位，共16Mb。工作在100MHz频率下。-VerilogHDL language to read and write internal data SRAM. SRAM chip model 61WV102416ALL, ie 1024K words, each word 16, a total of 16Mb. Work in the 100MHz frequency.
SRAM
- stm32f103zet6,通过stm32的fsmc来对sram的控制，实现数据读写-stm32f103zet6, through stm32 of fsmc to the control of sram, read and write data
FIFO
- verilog编写的读写fifo的源码，包括sram的读写控制-verilog source code written to read and write fifo, including the sram to read and write control
LM3SLib_GPIO_Parallel-Bus
- LM3S系列ARM用GPIO模拟并行总线扩展32KB SRAM PF0～PF7 D0～D7（数据总线） PA0～PA7 A0～A7（地址总线低8位） PB0～PB7 A8～A15（地址总线高8位） PB7 /CE（片选） PC4 /WE（写使能） PC5 /OE（读使能） 32KB SRAM 映射在地址0x0000～0x4FFF之间 为了加快访问速度，软件上将采用寄存器方式进行操作 PB7原为/TRST功能，现在也解放出来作为地址线A15-ARM
DE2_NIOS_Lite_12_flash
- 实现如何在Nios II对Flash进行读写 [SOPC、Nios II、DE2] -Introduce how to read and write the Flash using Nios II[SOPC、Nios II、DE2]
SRAM_Write_read
- SRAM读写的VHDL实验,通过对写入的数据与读出的数据进行比较,判断读写SRAM是否成功-SRAM read and write VHDL experiments on written data and read data to compare, to judge the success of SRAM read and write
sram_060803
- SRAM的读写代码，对SRAM进行了乒乓操作，用VHDL语言进行设计，很有参考价值，甚至可以直接复制代码来进行自己的设计-SRAM read and write code, ping-pong operation carried out on the SRAM, using VHDL language design, of great reference value, or even directly copy the code to carry out their own designs
USB_GPIF_SRAM
- FX2开发板提供资料，实现主机到外设的数据读写。-FX2 development board to provide information on the realization of the host to read and write data to the peripherals.
CY7c68013_fpga_write_sram
- FPGA自FX2 slavefifo中读取数据，写入至SRAM-FPGA since FX2 slavefifo read data, write to the SRAM
sram
- 对常用的sram完成读写控制，可以根据具体地址增加参数，非常灵活-Commonly used to read and write sram to complete control, can be increased in accordance with the specific parameters of address, a very flexible
yuyincaiji
- 语音采集与回放系统源代码：1.为了使读音数据存储的时间更长，速度更快，选用了256K*16Bit的SRAM；2.为了减少单片机的控制复杂度，使用了FPGA来控制SRAM的读写操作，节约了不少单片机的I/O资源；3.为了以后的高速数据存储，本设计中加入了fifo,其位宽及深度可在程序中自由设置，方便灵活。-Speech acquisition and playback system source code: 1. In order to make pronunciation longer data
sram
- STC51单片机128K sram读写实验的C语言程序，串口调试助手显示。-STC51 MCU 128K sram experimental C-language program to read and write, serial debugging assistant display.
sram
- to write and read from an sram. its actually a logic cell,when the write enable is high its possible to write data onto a memory location when read enable is high we can read the data in given memory location
63535309sram
- verilog编写的读写SRAM的源码，包括sram的读写控制-SRAM read and write verilog source code written in, including the sram to read and write control
sram
- 单片机写双口RAM，包括读写是否一致的自动检测-Microcontroller to write dual-port RAM, including the automatic detection of the consistency of read and write
IS61WV51216BLL
- 备注：使用的是VeriLog HDL语言 软件环境xilinx ISE 10.1，硬件：高教仪EXCD-1FPGA电路板。FPGA信号：spartan-3e . 功能编写硬件描述性语言实现FPGA对板上外设SRAM IS61WV51216BLL的读写，通过串口发送到上位机上，使用串口助手显示读取的数据。-Note: Use the VeriLog HDL language software environment xilinx ISE 10.1, hardware: Higher M
buffer
- 一个串行接收，并行发送的缓存器，其数据存储使用双端口SRAM（一读一写）实现，SRAM大小为深64、宽32位（64字×32位，使用提供的双端口SRAM见目录rf2shd4）。缓存器按一位串行输入接收数据，缓存器位置全满后不再接收串行数据输入；并根据读数请求，按接收数据的顺序，将接收完整的32位数据发送出去，并标记该缓存器位置为空，又可以放置新的串行输入数据。 设计了同步和异步两种串行发送方法。-Receive a serial, parallel send buffer, the data
sramright
- 控制SRAM的读写； 向SRAM中写入12个数据，这12个数据由助教随机给出； 当按下4×3键盘上的按键时，读出对应的数据，并显示在七段数码管上； SRAM为16位，用16进制表示为4位字符，对应4个七段数码管； -Control SRAM read and write write to the SRAM 12 data, the 12 random data is given by the TA when you press the 4 × 3 keys on the ke
SRAM
- SRAM读写测试实例，每秒钟进行一次单字节的SRAM 读和写操作，用chipscope查看时序波形。(SRAM read and write test instances, each time a single byte SRAM Read and write operations, use chipscope to see the timing waveform.)