Gallium Arsenide Diode Infrared Source

Optically Coupled to a Silicon npn

Phototransistor


High Direct-Current Transfer Ratio


Base Lead Provided for Conventional

Transistor Biasing


High-Voltage Electrical Isolation . . .

1.5-kV, or 3.55-kV Rating


Plastic Dual-In-Line Package


High-Speed Switching:

tr = 5 μs, tf = 5 μs Typical


Designed to be Interchangeable with

General Instruments MCT2 and MCT2E

absolute maximum ratings at 25°C free-air temperature (unless otherwise noted)†