文件名称:VLSI4
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The mismatch drift of dynamic circuits, which must
be corrected by precharging before activation, is a fundamental
process and device reliability issue for very large scale integration
(VLSI) circuits. In this paper, we report the consequences of hotcarrier effects on gate capacitance variation and its impact on
the mismatch drift of MO
be corrected by precharging before activation, is a fundamental
process and device reliability issue for very large scale integration
(VLSI) circuits. In this paper, we report the consequences of hotcarrier effects on gate capacitance variation and its impact on
the mismatch drift of MO
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下载文件列表
VLSI4/00964166.pdf
VLSI4/01277865.pdf
VLSI4/01661609.pdf
VLSI4/04200738.pdf
VLSI4/04403039.pdf
VLSI4/04436206.pdf
VLSI4/04469920.pdf
VLSI4/04599240.pdf
VLSI4/04637918.pdf
VLSI4/04689312.pdf
VLSI4/04801555.pdf
VLSI4/04914823.pdf
VLSI4/04915740.pdf
VLSI4/05200342.pdf
VLSI4/05288547.pdf
VLSI4/05325648.pdf
VLSI4/05339093.pdf
VLSI4/05460997.pdf
VLSI4/05497218.pdf
VLSI4/05640694.pdf
VLSI4/05892919.pdf
VLSI4/05934394.pdf
VLSI4/05975232.pdf
VLSI4/06046235.pdf
VLSI4/06081976.pdf
VLSI4/06112200.pdf
VLSI4/06118315.pdf
VLSI4
VLSI4/01277865.pdf
VLSI4/01661609.pdf
VLSI4/04200738.pdf
VLSI4/04403039.pdf
VLSI4/04436206.pdf
VLSI4/04469920.pdf
VLSI4/04599240.pdf
VLSI4/04637918.pdf
VLSI4/04689312.pdf
VLSI4/04801555.pdf
VLSI4/04914823.pdf
VLSI4/04915740.pdf
VLSI4/05200342.pdf
VLSI4/05288547.pdf
VLSI4/05325648.pdf
VLSI4/05339093.pdf
VLSI4/05460997.pdf
VLSI4/05497218.pdf
VLSI4/05640694.pdf
VLSI4/05892919.pdf
VLSI4/05934394.pdf
VLSI4/05975232.pdf
VLSI4/06046235.pdf
VLSI4/06081976.pdf
VLSI4/06112200.pdf
VLSI4/06118315.pdf
VLSI4
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