These are P-Channel enhancement mode silicon gate

power fi eld effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

specifi ed level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching

converters, motor drivers, relay drivers and drivers for other

high-power switching devices. The high input impedance

allows these types to be operated directly from integrated

circuits.-These are P-Channel enhancement mode silicon gatepower