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yianxiao
- 本系统以高效率D类功率放大器为核心，输出开关管以采用高速MOSFET管，连接成互补对称H桥式结构。
电子九阴真经
- 《DSP芯片的原理与开发应用》 《通过在FPGA设计流程引入功率分析》改善PCB的可靠性 《如何快速解决PCB设计EMI问题》菜鸟入门必看 《CADENCE射频SiP方法学套件加速无线应用设计》 《如何有效地管理FPGA设计中的时序问题》 《利用微型热管理和电源管理技术》解决电子设计的关键难题 最新射频IC应用编程接口设计方案 《DC/DC电源管理应用中的功率MOSFET的热分析方法》有效的解决方法 《基于PSoC3芯片的步进电机微步控制方案》经典案例 《SVN，HG，GIT命
IR2184S_-_HALF-BRIDGE_DRIVER.rar
- The IR2184(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Pro- prietary HVIC and latch immune CMOS technologies enable rugge- dized monolithic construction. The logic inpu
MOSFETslength
- MOSFET建模宝典-High frequency performance of submicrometer channel Silicon MOSFET’slength
irfs4321pbf
- irfs4321pbf, mosfet high current.
8N60
- 600v6a The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switchi
BUCKmosdriver
- buck电路的组成，MOSFET的使用驱动电路-buck the composition of the circuit, MOSFET driver circuit using
mosfet
- mosfet technical document used for mosfet based circuit designing
APT9302
- Ap. Not.for designing Mosfet Gate driver circuit
how-dose-mosfet-work
- mosfet工作原理，详细讲解功率场效应管得工作原理及实际应用中的注意事项-This article descr iptes how mosfet works，especially telles the features of power mosfet and some matters needs attention in practical.
1-MOSFET-1-Basics.pdf
- MOSFET basic for to start the carrier in the field of VLSI design
MOSFET
- MOSFET_设计选型指导、Introduction to Power MOSFETs and their Applications 、MOSFET Basics、MOSFET电路符号、MOSFET选型、电力（功率）MOSFET 的正栅压反向输出特性、功率MOSFET入门等-Power Mosfet
mosfet-25-transducer
- mosfet 25 W Hi-Fi transducer project.
MOSFET-MODELING
- modeling of some common used mosfet structure, good for new starter
00786a_Driving-MOSFET-in-High-Current--Switch-Mod
- Driving MOSFET in High-Current, Switch Mode Regulators
00799b_Matching-MOSFET-Drivers-to-MOSFETs
- Matching MOSFET Drivers to MOSFETs
00898a_Determining-MOSFET-Driver-Needs-for-Motor-
- Determining MOSFET Driver Needs for Motor Drive Applications
Further Insights in TFET Operation
- This asset originates from the tunneling injection being free of the subthreshold slope limit that fundamentally blocks the MOSFET [3]. Moreover, the limit of low ION in TFETs is wearing off, as drive currents around 100 ìA/ìm have been reported rece
An all SiC MOSFET High Performance PV Converter Cell
- Recent studies have pointed out the benefits of using Silicon Carbide (SiC) devices in photo-voltaic power conversion. In Particular, SiC Power MOSFET technology has greatly advanced over the last years and has presently reached sufficient maturity t
MOSFET-analysis
- MOSFET分析，针对MOSFET的各种导通情况进行等效电路的分析，用于整体电路的理论分析。-MOSFET analysis, according to the MOSFET of all kinds of conduction through the analysis of the equivalent circuit, the theoretical analysis of the overall circuit.