以TMS320VC5410为例,介绍对m29LV200BFlash存储器进行程序分页烧写以及上电后多页用户程序并行自举的方法。对多页Flash存储器的烧写,须在烧写过程中对已烧写的数据长度进行动态判断,

当达到预定烧写长度后对Flash进行换页,然后继续烧写,重复上述换页过程,直到程序烧写完为止。对

多页程序的并行自举,在系统上电后,利用TI提供的自举程序,将一个用户自己编写的前导程序载入DSP,利用该前导程序将多页程序载入DSP来实现程序的自举。此方法适用于多种Flash芯片和C5000系列DSP。-To TMS320VC5410 example, the process of paging memory m29LV200BFlash programming and multi-page power-user program in parallel after the bootstrap method. Flash memory for multi-page programming, the programming process to be in the length of the data that have been dynamically programmed to determine, when the length of the intended program the Flash after the feed, and then continue programming, repeat the paging process until the program finished burning up. Parallel programs for multi-page bootstrap on the system power, the use of TI provides the bootstrap procedure to a user' s own written procedures for loading leading DSP, using the leading multi-page program will load the DSP program to implement the program bootstrap. This method is suitable for a variety of Flash chips and C5000 series DSP.